?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet superfet tm july 2005 fcb20n60 600v n-channel mosfet features ? 650v @t j = 150c ?typ. r ds(on) = 0.15 ? ? ultra low gate charge (typ. q g = 75nc) ? low effective output capacitance (typ. c oss .eff = 165pf) ? 100% avalanche tested description superfet tm is, farichild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system min- iaturization and higher efficiency. absolute maximum ratings thermal characteristics * when mounted on the minimum pad size recommended (pcb mount { { { z z z { { { z z z s d g g s d symbol parameter fcb20n60 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 20 12.5 a a i dm drain current - pulsed (note 1) 60 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 208 1.67 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fcb20n60 unit r jc thermal resistance, junction-to-case 0.6 c/w r ja * thermal resistance, junction-to-ambient* 40 c/w r ja thermal resistance, junction-to-ambient 62.5 c/w
2 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 10a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 20a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fcb20n60 fcb20n60 d 2 -pak 330mm 24m 800 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c--650--v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.6--v/ c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 20a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 10a -- 0.15 0.19 ? g fs forward transconductance v ds = 40v, i d = 10a (note 4) -- 17 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2370 3080 pf c oss output capacitance -- 1280 1665 pf c rss reverse transfer capacitance -- 95 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 65 85 pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 165 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 20a r g = 25 ? (note 4, 5) -- 62 135 ns t r turn-on rise time -- 140 290 ns t d(off) turn-off delay time -- 230 470 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 480v, i d = 20a v gs = 10v (note 4, 5) -- 75 98 nc q gs gate-source charge -- 13.5 18 nc q gd gate-drain charge -- 36 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 20 a i sm maximum pulsed drain-source diode forward current -- -- 60 a v sd drain-source diode forward voltage v gs = 0v, i s = 20a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 20a di f /dt =100a/ s (note 4) -- 530 -- ns q rr reverse recovery charge -- 10.5 -- c
3 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 10 2 note 1. v ds = 40v 2. 250 s pulse test -55 c 150 c 25 c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.0 0.1 0.2 0.3 0.4 v gs = 20v v gs = 10v note : t j = 25 c r ds(on) [o ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 25 c 150 c notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1 . z jc (t) = 0.6 c/w max. 2. duty factor, d=t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse d uration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
7 www.fairchildsemi.com fcb20n60 rev. a1 fcb20n60 600v n-channel mosfet mechanical dimensions 10.00 0.20 10.00 0.20 (8.00) (4.40) 1.27 0.10 0.80 0.10 0.80 0.10 (2xr0.45) 9.90 0.20 4.50 0.20 0.10 0.15 2.40 0.20 2.54 0.30 15.30 0.30 9.20 0.20 4.90 0.20 1.40 0.20 2.00 0.10 (0.75) (1.75) (7.20) 0 ~3 1.20 0.20 9.20 0.20 15.30 0.30 4.90 0.20 (0.40) 2.54 typ 2.54 typ 1.30 +0.10 ?.05 0.50 +0.10 ?.05 d 2 -pak dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. fcb20n60 600v n-channel mosfet disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i16 8 www.fairchildsemi.com fcb20n60 rev. a1
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fcb20n60 600v n-channel superfet general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support superfet tm is, farichild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conv ersion in switching mo de operation for system miniaturization and higher efficiency. z 650v@t j = 150c z typ. r ds(on) = 0.15 ? z ultra low gate charge (typ. q g = 75nc) z low effective output capacitance (typ. c oss .eff = 165pf) z 100% avalanche tested datasheet download this datasheet e - mail this datasheet this page print version related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/ n fcb20n60 - 600v n-channel su p erfet 16-au g -2007 mhtml:file://c:\temp\FCB20N60TM.mht
back to top qualification support click on a product for detailed qualification data back to top product product status pb-free status pricing* package type leads packing method package marking convention** FCB20N60TM full production $4.96 to - 263(d2pak) 2 tape reel line 1: $y (fairchild logo) & z (asm. plant code) &e& 3 (3-digit date code) line 2: fcb line 3: 20n60 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fcb20n60 is available. click here for more information . product FCB20N60TM ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/ n fcb20n60 - 600v n-channel su p erfet 16-au g -2007 mhtml:file://c:\temp\FCB20N60TM.mht
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